Микросхемы FLASH памяти Sharp
- Подробности
- Категория: Микросхемы памяти Flash
Dual Power Supply Flash Memory
|
Model |
Density |
Configuration |
Erase |
Access |
Supply |
Read |
Standby |
Operating |
Package |
||||||
|
Vcc=5V |
Vcc |
Vpp |
SOP |
TSOP |
RTSOP |
CSP |
|||||||||
|
70 |
85 |
120 |
5 |
12 |
|||||||||||
|
LH28F008SA |
8M |
1Mx8 |
64kB |
|
35 |
100 |
C,E2 |
44 |
40 |
40 |
42 |
||||
5V Single-Power-Supply Flash Memory
|
Model |
Density |
Configuration |
Erase |
Access |
Supply |
Read |
Standby |
Operating |
Package |
||||||
|
Vcc=5V |
Vcc=3.3V |
Vcc |
Vpp |
Min |
SOP |
TSOP |
RTSOP |
||||||||
|
60 |
70 |
120 |
5 |
5 |
|||||||||||
|
LH28F004SU |
4M |
512Kx8 |
16kB |
|
|
5 |
60 |
100 |
C,I |
|
40 |
|
|||
|
LH28F016SU |
16M |
2Mx8/1Mx16 |
64kB |
|
3.3 |
35 |
100 |
C,I |
|
56 |
56 |
||||
|
LH28F020SU |
2M |
256Kx8 |
16kB |
|
|
5 |
60 |
100 |
C,I |
32 |
32 |
|
|||
|
LH28F400SU |
4M |
512Kx8/256Kx16 |
16kB |
|
|
5 |
60 |
100 |
C,I |
44 |
48/56 |
|
|||
|
LH28F800SU |
8M |
1Mx8/512Kx16 |
64kB |
|
|
3.3 |
35 |
100 |
C,I |
|
56 |
56 |
|||
3V Single-Power-Supply Flash Memory
|
Model |
Density |
Configuration |
Erase |
Access |
Supply |
Read |
Standby |
Operating |
Package |
|||||
|
Vcc=3.0V |
Vcc |
Vpp |
SOP |
TSOP |
RTSOP |
CSP |
||||||||
|
120 |
150 |
3 |
3 |
|||||||||||
|
LH28F016LL |
16M |
2Mx8/1Mx16 |
64kB |
35 |
80 |
C,I |
|
56 |
56 |
|
||||
Dual Works Flash Memory
|
Model |
Density |
Configuration |
Erase |
Access time (ns) |
Supply voltage (V) |
Read |
Standby |
Temp |
Pkg |
||||||||||||
|
Vcc=5V |
Vcc=3.3V |
Vcc=2.7V |
Vcc |
Vpp |
Min |
TSOP |
|||||||||||||||
|
85 |
100 |
150 |
120 |
190 |
120 |
150 |
190 |
2.7 |
5 |
2.7 |
2.9 |
5 |
|||||||||
|
LH28F008SCHSD |
8M |
512kx8x2 |
64kB |
|
|
|
|
|
|
|
2.7 |
TDB |
100 |
C |
48 |
||||||
|
LH28F040SUTD |
4M |
256kx8x2 |
16kB |
|
|
|
|
|
|
|
2.7 |
35 |
160 |
E1 |
40 |
||||||
|
LH28F160SGED |
16M |
512Kx16x2 |
64kB |
|
|
|
|
|
|
|
2.7 |
TDB |
100 |
C |
48 |
||||||
|
LH28F320S3TD |
32M |
2Mx8x2/1Mx16x2 |
64kB |
|
|
|
|
|
|
|
|
2.7 |
TDB |
100 |
C |
56 |
|||||
Smart Voltage (organized x8) Flash Memory
|
Model |
Density |
Config |
Erase |
Access time (ns) |
Supply |
Read |
Standby |
Temp |
Package |
Remarks |
|||||||||
|
Vcc |
|||||||||||||||||||
|
5V |
3V |
2.7V |
Smart |
Min |
SOP |
TSOP |
RTSOP |
CSP |
|||||||||||
|
85 |
95 |
120 |
120 |
150 |
150 |
||||||||||||||
|
LH28F002SC |
2M |
256kx8 |
64kB |
|
DiagraM |
2.7 |
50 |
100 |
C,I |
44 |
40 |
|
48 |
Intel compatible |
|||||
|
LH28F004SC |
4M |
512kx8 |
64kB |
|
DiagraM |
2.7 |
50 |
100 |
C,I |
44 |
40 |
|
48 |
Intel compatible |
|||||
|
LH28F008SC |
8M |
1Mx8 |
64kB |
|
DiagraM |
2.7 |
50 |
100 |
C,I |
44 |
40 |
40 |
48 |
Intel compatible |
|||||
|
LH28F016SC |
16M |
2Mx8 |
64kB |
|
DiagraM |
2.7 |
50 |
100 |
C,I |
44 |
40 |
40 |
48 |
Intel compatible |
|||||
Smart Voltage (organized x16) Flash Memory
|
Model |
Density |
Config |
Erase |
Access time (ns) |
Supply voltage (V) |
Read |
Standby |
Temp |
Package |
Remarks |
|||||||||
|
Vcc=5V |
Vcc=3V |
Vcc=2.7V |
Smart voltage |
Min |
SOP |
TSOP |
RTSOP |
CSP |
|||||||||||
|
70 |
100 |
85 |
100 |
100 |
120 |
||||||||||||||
|
LH28F800SG |
8M |
512kx16 |
32 kW |
DiagraM |
2.7 |
50 |
100 |
C,I |
44 |
48 |
48 |
48 |
2.7V read, write, erase avialable |
||||||
Boot Block Smart Voltage (organized x16) Flash Memory (Pin compatible with Flash memories from Intel)
|
Model |
Density |
Config |
Boot |
Erase |
Access time (ns) |
Supply |
Read |
Standby |
Temp |
||||||||||||
|
T |
B |
Boot |
Main |
Vcc=5V |
Vcc=3V |
Vcc=2.7V |
Vcc=2.7 to 2.6V |
Vcc=2.4 to 3.0V |
Smart |
Min |
|||||||||||
|
85 |
120 |
100 |
130 |
120 |
150 |
100 |
120 |
120 |
150 |
||||||||||||
|
LH28F160BG |
16M |
1Mx16 |
4kW |
32kW |
|
|
|
|
|
|
Diagram |
2.4 |
TBD |
TBD |
C,I |
||||||
|
LH28F400BG |
4M |
256kx16 |
4kW |
32kW |
|
|
|
|
Diagram |
2.7 |
50 |
100 |
C,I |
||||||||
|
LH28F800BG |
8M |
512kx16 |
4kW |
32kW |
|
|
|
|
Diagram |
2.7 |
50 |
100 |
C,I |
||||||||
Symmetrical Block Smart Voltage Flash Memory (Full compatible with Flash memories from Intel)
|
Model |
Dens |
Config |
Erase |
Access time (ns) |
Supply voltage (V) |
Read |
Standby |
Temp |
||||||||||||||||
|
Vcc=5V |
Vcc=3V |
Vcc=2.7V |
Vcc |
Vpp |
Single |
Min |
||||||||||||||||||
|
70 |
90 |
100 |
120 |
100 |
110 |
130 |
140 |
120 |
130 |
150 |
160 |
3 |
5 |
3 |
5 |
5 |
||||||||
|
LH28F160S3 |
16M |
2Mx8/1Mx16 |
64kB/32kW |
|
|
|
|
|
|
|
|
|
|
2.7 |
50 |
100 |
C,I |
|||||||
|
LH28F160S5 |
16M |
2Mx8/1Mx16 |
64kB/32kW |
|
|
|
|
|
|
|
|
|
|
|
|
5 |
50 |
100 |
C,I |
|||||
|
LH28F320S3 |
32M |
4Mx8/2Mx16 |
64kB/32kW |
|
|
|
|
|
|
|
|
|
|
2.7 |
TBD |
100 |
C,I |
|||||||
|
LH28F320S5 |
32M |
4Mx8/2Mx16 |
64kB/32kW |
|
|
|
|
|
|
|
|
|
|
|
|
5 |
TBD |
100 |
C,I |
|||||
Flash Memory + SRAM
|
Model |
Flash |
SRAM |
Access time (ns) |
Supply voltage (V) |
Supply current |
Temp |
Pkg |
||||||||||||||
|
Vcc (V) |
|||||||||||||||||||||
|
Dens |
Config |
Erase |
Dens |
Config |
3.3 |
3.6 |
2.7 |
Vcc |
Data retention |
Flash Operating Max (mA) |
SRAM Max (mA) |
Data retension (µA) |
Standby Max (µA) |
STSOP |
|||||||
|
85 |
85 |
120 |
150 |
2.7 to 3.3 |
2.7 to 3.6 |
2.0 to 3.3 |
2.0 to 3.6 |
Read |
Write |
Flash power off |
Flash deep power down |
||||||||||
|
LR-S1301 |
4M |
512kx8 |
|
1M |
128kx8 |
|
|
|
|
12 |
57 |
15 |
1 |
21 |
26 |
C |
40 |
||||
|
LR-S1302 |
8M |
1Mx8 |
64kB |
1M |
128kx8 |
|
|
|
|
12 |
57 |
15 |
1 |
13 |
18 |
C |
40 |
||||
|
LR-S1303 |
8M |
1Mx8 |
64kB |
2M |
256kx8 |
|
|
|
|
12 |
57 |
25 |
2 |
14 |
20 |
C |
40 |
||||
|
LR-S1304 |
8M |
512kx16 |
32kW |
1M |
64kx16 |
|
|
|
|
25 |
57 |
25 |
1 |
22 |
26 |
C |
48 |
||||
|
LR-S1305 |
16M |
2Mx8 |
64kB |
2M |
256kx8 |
|
|
|
|
12 |
57 |
25 |
2 |
22 |
26 |
C |
48 |
||||
|
LR-S1306 |
8M |
512kx16 |
32kW |
2M |
256kx16 |
|
|
|
|
25 |
57 |
25 |
2 |
22 |
26 |
C |
48 |
||||
|
LR-S1307 |
16M |
1Mx16 |
32kW |
2M |
512kx8 |
|
|
|
|
25 |
97 |
25 |
2 |
12 |
16 |
C |
60 |
||||
Temperature Range: C: 0 - +70°C E1: -20 - +70°C E2: -25 - +85°C I: -45 - +85°C