Russian Arabic English French German Hungarian Japanese Romanian Turkish Ukrainian

Микросхемы FLASH памяти Sharp

Dual Power Supply Flash Memory

Model

Density

Configuration

Erase
block

Access
time (ns)

Supply
voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Operating
temp.
(°C)

Package

Vcc=5V

Vcc

Vpp

SOP

TSOP

RTSOP

CSP

70

85

120

5

12

LH28F008SA

8M

1Mx8

64kB

 

       

35

100

C,E2

44

40

40

42

 5V Single-Power-Supply Flash Memory

Model

Density

Configuration

Erase
block

Access
time (ns)

Supply
voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Operating
temp.
(°C)

Package

Vcc=5V

Vcc=3.3V

Vcc

Vpp

Min
Read

SOP

TSOP

RTSOP

60

70

120

5

5

LH28F004SU

4M

512Kx8

16kB

 

 

 

   

5

60

100

C,I

 

40

 

LH28F016SU

16M

2Mx8/1Mx16

64kB

 

       

3.3

35

100

C,I

 

56

56

LH28F020SU

2M

256Kx8

16kB

 

 

 

   

5

60

100

C,I

32

32

 

LH28F400SU

4M

512Kx8/256Kx16

16kB

 

 

 

   

5

60

100

C,I

44

48/56

 

LH28F800SU

8M

1Mx8/512Kx16

64kB

 

 

 

   

3.3

35

100

C,I

 

56

56

 3V Single-Power-Supply Flash Memory

Model

Density

Configuration

Erase
block

Access
time
(ns)

Supply
voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Operating
temp.
(°C)

Package

Vcc=3.0V

Vcc

Vpp

SOP

TSOP

RTSOP

CSP

120

150

3

3

LH28F016LL

16M

2Mx8/1Mx16

64kB

       

35

80

C,I

 

56

56

 

 Dual Works Flash Memory

Model

Density

Configuration

Erase
block

Access time (ns)

Supply voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Temp
(°C)

Pkg

Vcc=5V

Vcc=3.3V

Vcc=2.7V

Vcc

Vpp

Min
Read

TSOP

85

100

150

120

190

120

150

190

2.7

5

2.7

2.9

5

LH28F008SCHSD

8M

512kx8x2

64kB

 

 

 

 

 

 

 

 

   

 

   

2.7

TDB

100

C

48

LH28F040SUTD

4M

256kx8x2

16kB

 

 

 

 

 

 

 

     

 

 

 

2.7

35

160

E1

40

LH28F160SGED

16M

512Kx16x2

64kB

 

 

 

 

 

 

 

 

     

 

 

2.7

TDB

100

C

48

LH28F320S3TD

32M

2Mx8x2/1Mx16x2

64kB

 

 

 

 

 

 

 

 

 

 

 

 

 

2.7

TDB

100

C

56

 Smart Voltage (organized x8) Flash Memory

Model

Density

Config

Erase
block

Access time (ns)

Supply
voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Temp
(°C)

Package

Remarks

Vcc

5V

3V

2.7V

Smart
voltage

Min
Read

SOP

TSOP

RTSOP

CSP

85

95

120

120

150

150

LH28F002SC

2M

256kx8

64kB

 

         

DiagraM

2.7

50

100

C,I

44

40

 

48

Intel compatible

LH28F004SC

4M

512kx8

64kB

 

 

       

DiagraM

2.7

50

100

C,I

44

40

 

48

Intel compatible

LH28F008SC

8M

1Mx8

64kB

 

 

       

DiagraM

2.7

50

100

C,I

44

40

40

48

Intel compatible

LH28F016SC

16M

2Mx8

64kB

 

         

DiagraM

2.7

50

100

C,I

44

40

40

48

Intel compatible

 Smart Voltage (organized x16) Flash Memory

Model

Density

Config

Erase
block

Access time (ns)

Supply voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Temp
(°C)

Package

Remarks

Vcc=5V

Vcc=3V

Vcc=2.7V

Smart voltage

Min
Read

SOP

TSOP

RTSOP

CSP

70

100

85

100

100

120

LH28F800SG

8M

512kx16

32 kW

           

DiagraM

2.7

50

100

C,I

44

48

48

48

2.7V read, write, erase avialable

 Boot Block Smart Voltage (organized x16) Flash Memory (Pin compatible with Flash memories from Intel)

Model

Density

Config

Boot
type

Erase
block

Access time (ns)

Supply
voltage (V)

Read
current
mA Max
f=8MHz

Standby
current
µA Max

Temp
(°C)

T

B

Boot
size

Main
size

Vcc=5V

Vcc=3V

Vcc=2.7V

Vcc=2.7 to 2.6V

Vcc=2.4 to 3.0V

Smart
voltage

Min
Read

85

120

100

130

120

150

100

120

120

150

LH28F160BG

16M

1Mx16

   

4kW

32kW

 

 

 

 

 

 

       

Diagram

2.4

TBD

TBD

C,I

LH28F400BG

4M

256kx16

   

4kW

32kW

           

 

 

 

 

Diagram

2.7

50

100

C,I

LH28F800BG

8M

512kx16

   

4kW

32kW

           

 

 

 

 

Diagram

2.7

50

100

C,I

 Symmetrical Block Smart Voltage Flash Memory (Full compatible with Flash memories from Intel)

Model

Dens

Config

Erase
block

Access time (ns)

Supply voltage (V)

Read
curr-t
mA
Max
8MHz

Standby
current
µA Max

Temp
°C

Vcc=5V

Vcc=3V

Vcc=2.7V

Vcc

Vpp

Single

Min
Read

70

90

100

120

100

110

130

140

120

130

150

160

3

5

3

5

5

LH28F160S3

16M

2Mx8/1Mx16

64kB/32kW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   

 

2.7

50

100

C,I

LH28F160S5

16M

2Mx8/1Mx16

64kB/32kW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   

5

50

100

C,I

LH28F320S3

32M

4Mx8/2Mx16

64kB/32kW

 

 

 

 

 

 

 

 

 

 

 

   

 

   

 

2.7

TBD

100

C,I

LH28F320S5

32M

4Mx8/2Mx16

64kB/32kW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   

5

TBD

100

C,I

 Flash Memory + SRAM

Model

Flash

SRAM

Access time (ns)

Supply voltage (V)

Supply current

Temp
(°C)

Pkg

Vcc (V)

Dens

Config

Erase
block

Dens

Config

3.3

3.6

2.7

Vcc

Data retention

Flash Operating Max (mA)

SRAM Max (mA)

Data retension (µA)

Standby Max (µA)

STSOP

85

85

120

150

2.7 to 3.3

2.7 to 3.6

2.0 to 3.3

2.0 to 3.6

Read

Write

Flash power off

Flash deep power down

LR-S1301

4M

512kx8

 

1M

128kx8

 

 

 

   

 

 

 

12

57

15

1

21

26

C

40

LR-S1302

8M

1Mx8

64kB

1M

128kx8

 

 

 

 

 

 

 

 

12

57

15

1

13

18

C

40

LR-S1303

8M

1Mx8

64kB

2M

256kx8

 

 

 

 

 

 

 

 

12

57

25

2

14

20

C

40

LR-S1304

8M

512kx16

32kW

1M

64kx16

 

 

 

 

 

 

 

 

25

57

25

1

22

26

C

48

LR-S1305

16M

2Mx8

64kB

2M

256kx8

 

 

 

 

 

 

 

 

12

57

25

2

22

26

C

48

LR-S1306

8M

512kx16

32kW

2M

256kx16

 

   

 

 

 

 

 

25

57

25

2

22

26

C

48

LR-S1307

16M

1Mx16

32kW

2M

512kx8

 

   

 

 

 

 

 

25

97

25

2

12

16

C

60


  Temperature Range:   C: 0 - +70°C     E1: -20 - +70°C    E2: -25 - +85°C    I: -45 - +85°C

 

Рейтинг@Mail.ru Яндекс.Метрика